Title Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate
Authors Cui, Fangfang
Wang, Cong
Li, Xiaobo
Wang, Gang
Liu, Kaiqiang
Yang, Zhou
Feng, Qingliang
Liang, Xing
Zhang, Zhongyue
Liu, Shengzhong
Lei, Zhibin
Liu, Zonghuai
Xu, Hua
Zhang, Jin
Affiliation Shaanxi Normal Univ, Sch Mat Sci & Engn, Xian 710119, Peoples R China.
Shaanxi Normal Univ, Sch Phys & Informat Technol, Xian 710119, Peoples R China.
Shaanxi Normal Univ, Sch Chem & Chem Engn, Xian 710119, Peoples R China.
Peking Univ, Key Lab Phys & Chem Nanodevices, State Key Lab Struct Chem Unstable & Stable Speci, Ctr Nanochem,Coll Chem & Mol Engn,Beijing Natl La, Beijing 100871, Peoples R China.
Shaanxi Normal Univ, Sch Mat Sci & Engn, Xian 710119, Peoples R China.
Zhang, J (reprint author), Peking Univ, Key Lab Phys & Chem Nanodevices, State Key Lab Struct Chem Unstable & Stable Speci, Ctr Nanochem,Coll Chem & Mol Engn,Beijing Natl La, Beijing 100871, Peoples R China.
Keywords 2D anisotropic materials,Re-Te binary eutectic,epitaxial growth,high crystal quality,rhenium disulphide (ReS2)
FIELD-EFFECT TRANSISTORS
TRANSITION-METAL DICHALCOGENIDES
CHEMICAL-VAPOR-DEPOSITION
INPLANE ANISOTROPY
RAMAN-SPECTROSCOPY
BLACK PHOSPHORUS
MONOLAYER MOS2
ELECTRONICS
PHOTOLUMINESCENCE
OPTOELECTRONICS
Issue Date 2016
Publisher ADVANCED MATERIALS
Citation ADVANCED MATERIALS.2016,28(25),5019-5024.
Abstract Anisotropic 2D layered material rhenium disulfi de (ReS2) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 degrees C) and sulfur precursors in the temperature range of 460-900 degrees C with high efficiency.
URI http://hdl.handle.net/20.500.11897/491953
ISSN 0935-9648
DOI 10.1002/adma.201600722
Indexed SCI(E)
EI
PubMed
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纳米器件物理与化学教育部重点实验室

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