Title Nonlinear transport of graphene in the quantum Hall regime
Authors Tian, Shibing
Wang, Pengjie
Liu, Xin
Zhu, Junbo
Fu, Hailong
Taniguchi, Takashi
Watanabe, Kenji
Chen, Jian-Hao
Lin, Xi
Affiliation Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.
Natl Inst Mat Sci, High Pressure Grp, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan.
Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China.
Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.
Chen, JH (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China.
Keywords graphene
quantum Hall effect
quantum resistance standard
RESISTANCE STANDARD
SILICON-CARBIDE
BREAKDOWN
DEVICES
FERMIONS
CONTACT
Issue Date 2017
Publisher 2D MATERIALS
Citation 2D MATERIALS.2017,4(1).
Abstract Wehave studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the nu = +/- 6 states might be a better target for the quantum resistance standard.
URI http://hdl.handle.net/20.500.11897/475013
ISSN 2053-1583
DOI 10.1088/2053-1583/4/1/015003
Indexed SCI(E)
Appears in Collections: 量子材料科学中心

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