| Title | Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies |
| Authors | Li, Chao Gao, Bin Yao, Yuan Guan, Xiangxiang Shen, Xi Wang, Yanguo Huang, Peng Liu, Lifeng Liu, Xiaoyan Li, Junjie Gu, Changzhi Kang, Jinfeng Yu, Richeng |
| Affiliation | Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China. Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. Kang, JF (reprint author), Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. Yu, RC (reprint author), Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China. |
| Keywords | ELECTROLYTE-BASED RERAM CONDUCTIVE FILAMENTS MEMRISTOR RRAM HOLOGRAPHY OPERATIONS RESISTANCE CHANNELS DEVICES MODEL |
| Issue Date | 2017 |
| Publisher | ADVANCED MATERIALS |
| Citation | ADVANCED MATERIALS.2017,29(10). |
| Abstract | Resistive switching processes in HfO2 are studied by electron holography and in situ energy-filtered imaging. The results show that oxygen vacancies are gradually generated in the oxide layer under ramped electrical bias, and finally form several conductive channels connecting the two electrodes. It also shows that the switching process occurs at the top interface of the hafnia layer. |
| URI | http://hdl.handle.net/20.500.11897/474608 |
| ISSN | 0935-9648 |
| DOI | 10.1002/adma.201602976 |
| Indexed | SCI(E) |
| Appears in Collections: | 信息科学技术学院 |
