| Title | Epitaxial Growth of Ternary Topological Insulator Bi2Te2Se 2D Crystals on Mica |
| Authors | Liu, Yujing Tang, Min Meng, Mengmeng Wang, Mingzhan Wu, Jinxiong Yin, Jianbo Zhou, Yubing Guo, Yunfan Tan, Congwei Dang, Wenhui Huang, Shaoyun Xu, H. Q. Wang, Yong Peng, Hailin |
| Affiliation | Peking Univ, Beijing Sci & Engn Ctr Nanocarbons, Beijing Natl Lab Mol Sci, Ctr Nanochem,Coll Chem & Mol Engn, Beijing 100871, Peoples R China. Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China. Zhejiang Univ, Sch Mat Sci & Engn, Ctr Electron Microscopy, Hangzhou 310027, Zhejiang, Peoples R China. Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China. Peking Univ, Dept Elect, Beijing 100871, Peoples R China. Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China. |
| Keywords | DER-WAALS EPITAXY QUANTUM OSCILLATIONS NANOSTRUCTURES NANORIBBONS CHEMISTRY SURFACE BI2SE3 |
| Issue Date | 2017 |
| Publisher | SMALL |
| Citation | SMALL.2017,13(18). |
| Abstract | Nanostructures of ternary topological insulator (TI) Bi2Te2Se are, in principle, advantageous to the manifestation of topologically nontrivial surface states, due to significantly enhanced surface-to-volume ratio compared with its bulk crystals counterparts. Herein, the synthesis of 2D Bi2Te2Se crystals on mica via the van der Waals epitaxy method is explored and systematically the growth behaviors during the synthesis process are investigated. Accordingly, 2D Bi2Te2Se crystals with domain size up to 50 mu m large and thickness down to 2 nm are obtained. A pronounced weak antilocalization effect is clearly observed in the 2D Bi2Te2Se crystals at 2 K. The method for epitaxial growth of 2D ternary Bi2Te2Se crystals may inspire materials engineering toward enhanced manifestation of the subtle surface states of TIs and thereby facilitate their potential applications in next-generation spintronics. |
| URI | http://hdl.handle.net/20.500.11897/473461 |
| ISSN | 1613-6810 |
| DOI | 10.1002/smll.201603572 |
| Indexed | SCI(E) |
| Appears in Collections: | å å¦ä¸ å å å·¥ç¨ å¦é ¢ 信息科学技术学院 前沿交叉学科研究院 纳米器件物理与化学教育部重点实验室 |
