| Title | Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates |
| Authors | Hu, Anqi Yang, Xuelin Cheng, Jianpeng Guo, Lei Zhang, Jie Feng, Yuxia Ji, Panfeng Tang, Ning Ge, Weikun Wang, Xinqiang Shen, Bo |
| Affiliation | Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China. Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. |
| Keywords | AIGaN/GaN heterostructures on Si Hot electron Vertical leakage Breakdown FIELD-EFFECT TRANSISTORS MOBILITY TRANSISTORS TEMPERATURE-DEPENDENCE IMPACT IONIZATION MECHANISMS DEVICES |
| Issue Date | 2017 |
| Publisher | SUPERLATTICES AND MICROSTRUCTURES |
| Citation | SUPERLATTICES AND MICROSTRUCTURES.2017,107,240-245. |
| Abstract | We present a hot electron assisted vertical leakage/breakdown mechanism in AIGaN/GaN heterostructures on Si substrates by a combination of applying vertical and lateral bias conditions. Beyond a critical bias point, the vertical leakage current under the combined bias condition is larger than that under a pure vertical bias condition which results in a lower breakdown voltage. The critical bias has a positive temperature dependence. A model is proposed that highly energetic hot electrons can release trapped electrons from defects and even ionize them. The model is proved by investigating the detrapping and ionization mechanisms by changing hot electron energy. (C) 2017 Elsevier Ltd. All rights reserved. |
| URI | http://hdl.handle.net/20.500.11897/472575 |
| ISSN | 0749-6036 |
| DOI | 10.1016/j.spmi.2017.03.058 |
| Indexed | SCI(E) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
