| Title | Controlled Gas Molecules Doping of Monolayer MoS2 via Atomic-Layer-Deposited Al2O3 Films |
| Authors | Li, Yuanzheng Li, Xinshu Chen, Heyu Shi, Jia Shang, Qiuyu Zhang, Shuai Qui, Xiaohui Liu, Zheng Zhang, Qing Xu, Haiyang Liu, Weizhen Liu, Xinfeng Liu, Yichun |
| Affiliation | Northeast Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Jilin, Peoples R China. Northeast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Jilin, Peoples R China. Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Div Nanophoton, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China. Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China. Northeast Normal Univ, Natl Demonstrat Ctr Expt Phys Educ, Changchun 130024, Jilin, Peoples R China. Nanyang Technol Univ, Sch Mat Sci & Engn, Ctr Programmable Mat, Singapore 639798, Singapore. Northeast Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Jilin, Peoples R China. Xu, HY Liu, WZ (reprint author), Northeast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Jilin, Peoples R China. Liu, XF (reprint author), Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Div Nanophoton, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China. Xu, HY Liu, WZ (reprint author), Northeast Normal Univ, Natl Demonstrat Ctr Expt Phys Educ, Changchun 130024, Jilin, Peoples R China. |
| Keywords | monolayer MoS2 aomic layer deposition (ALD) gas molecules doping Al2O3 stability MOLYBDENUM-DISULFIDE 2-DIMENSIONAL SEMICONDUCTORS PHOTOLUMINESCENCE ENHANCEMENT TRANSITION EXCITONS TRANSISTORS DEFECTS TRIONS GROWTH |
| Issue Date | 2017 |
| Publisher | ACS APPLIED MATERIALS & INTERFACES |
| Citation | ACS APPLIED MATERIALS & INTERFACES.2017,9(33),27402-27408. |
| Abstract | MoS2 as atomically thin semiconductor is highly sensitive to ambient atmosphere (e.g., oxygen, moisture, etc.) in optical and electrical properties. Here we report a controlled gas molecules doping of monolayer MoS2 via atomic-layer-deposited Al2O3 films. The deposited Al2O3 films, in the shape of nanospheres, can effectively control the contact areas between ambient atmosphere and MoS2 that allows precise modulation of gas molecules doping. By analyzing photoluminescence (PL) emission spectra of MoS2 with different thickness of Al2O3, the doped carrier concentration is estimated at similar to 2.7 X 10(13) cm(-2) based on the mass action model. Moreover, time-dependent PL measurements indicate an incremental stability of single layer MoS2 as the thicknesses of Al2O3 capping layer increase. Effective control of gas molecules doping in monolayer MoS2 provides us a valuable insight into the applications of MoS2 based optical and electrical devices. |
| URI | http://hdl.handle.net/20.500.11897/471388 |
| ISSN | 1944-8244 |
| DOI | 10.1021/acsami.7b08893 |
| Indexed | SCI(E) |
| Appears in Collections: | 工学院 |
