| Title | Analysis and modeling of geometry dependent thermal resistance in silicon-on-insulator metal-oxide-semiconductor field-effect transistors |
| Authors | Zhou, Xingye Inoue, Takuya Kitamura, Masashi Matsuura, Kai Miyake, Masataka Iizuka, Takahiro Umeda, Takuya Kikuchihara, Hideyuki Mattausch, Hans Juergen He, Jin Miura-Mattausch, Mitiko |
| Affiliation | Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan Electronic Engineering and Computer Science, Peking University, Beijing 100871, P. R., China SoC Key Laboratory, Peking University, Shenzhen 518057, P. R, China |
| Issue Date | 2013 |
| Citation | 2013,52(4 PART 2). |
| Abstract | It is demonstrated that the self-heating effect easily causes elevated thermal equilibrium condition within the active device for thin substrate MOSFETs. This leads to a non-linearity of the thermal resistance, which originally is a material specific constant. A compact model for describing the observed effective nonlinear thermal resistance has been developed which captures the device geometry effects as well as the bias condition dependences. ? 2013 The Japan Society of Applied Physics. |
| URI | http://hdl.handle.net/20.500.11897/461397 |
| DOI | 10.7567/JJAP.52.04CC29 |
| Indexed | EI |
| Appears in Collections: | 信息科学技术学院 |
