| Title | The effect of current compliance on the resistive switching behaviors in TiN/ZrO2/Pt memory device |
| Authors | Sun, Bing Liu, Lifeng Xu, Nuo Gao, Bin Wang, Yi. Han, Dedong Liu, Xiaoyan Han, Ruqi Kang, Jinfeng |
| Affiliation | Institute of Microelectronics, Peking University, Beijing 100871, China |
| Issue Date | 2009 |
| Publisher | Japanese Journal of Applied Physics |
| Citation | Japanese Journal of Applied Physics.2009,48(4 PART 2). |
| Abstract | In this paper, TiN/ZrO2/Pt sandwiched resistive switching memory devices were fabricated. The effect of set current compliance on the resistive switching behaviors in TiN/ZrO2/Pt memory device was studied. The different dependence of low resistance state on the set current compliance were observed under the different magnitudes of set current compliance: 1) the average read current was linearly dependent on the set current compliance in the magnitude of low set current compliance; 2) then a weaker dependence of the average read current on the set current compliance was observed in the magnitude of higher set current compliance; 3) when the current compliance is high enough, the unipolar resistive switching behaviors instead of the bipolar resistive switching was shown. A physical model based on oxygen vacancy conducting filamentary paths is proposed to explain the effect of set current compliance on the resistive switching behaviors in TiN/ZrO2/Pt memory device. ? 2009 The Japan Society of Applied Physics. |
| URI | http://hdl.handle.net/20.500.11897/460941 |
| ISSN | 00214922 |
| DOI | 10.1143/JJAP.48.04C061 |
| Indexed | EI |
| Appears in Collections: | 信息科学技术学院 |
