Title | Simulation of the RRAM-based Flip-Flops with Data Retention |
Authors | Li, Mu Huang, Peng Shen, Lei Zhou, Zheng Kang, Jin-Feng Liu, Xiao-Yan |
Affiliation | Peking Univ, Shenzhen Grad Sch, Shenzhen, Peoples R China. Peking Univ, Inst Microelect, Beijing, Peoples R China. |
Keywords | RRAM non-volatile flip-flop IoT 1T1R SPICE MODEL |
Issue Date | 2016 |
Publisher | 7th IEEE International Nanoelectronics Conference |
Citation | 7th IEEE International Nanoelectronics Conference.2016. |
Abstract | A RRAM-based non-volatile flip-flop (NVFF) is designed to meet energy efficiency requirement for standby-power-critical applications in the deployment solution of IoT (Internet of Things). Adding only a pair of 1T1R cell into slave latch of a traditional FF can cut off the standby leakage at the cost of 4pJ write energy, and 20ps data retention time upon ideal power-on. The NVFF circuit is simulated and analyzed in HSPICE with a SPICE compact model of oxide-based RRAM on the conductive filament evolution model. |
URI | http://hdl.handle.net/20.500.11897/460104 |
ISSN | 2159-3523 |
Indexed | CPCI-S(ISTP) |
Appears in Collections: | 深圳研究生院待认领 信息科学技术学院 |