Title Additional Degree of Freedom in Interleaved Junction Silicon Modulators against Efficiency-energy Conflict
Authors Li, Xinbai
Yang, Fenghe
Li, Tiantian
Deng, Qingzhong
Chen, Ruobing
Michel, Jurgen
Zhou, Zhiping
Affiliation Peking Univ, Sch Elect Engn & Comp Sci, State Key Lab Adv Opt Commun Syst & Networks, Beijing 100871, Peoples R China.
MIT, MIT Microphoton Ctr, 77 Massachusetts Ave, Cambridge, MA 02139 USA.
Issue Date 2016
Publisher Conference on Lasers and Electro-Optics (CLEO)
Citation Conference on Lasers and Electro-Optics (CLEO).2016.
Abstract This paper introduces lateral contribution into interleaved junction. Numerical analysis suggests light-carrier overlap enhancement. V pi L pi and energy consumption can both surpass lateral junction performance as opposed to conventional interleaved junction suffering from efficiency-energy conflict.
URI http://hdl.handle.net/20.500.11897/459728
ISSN 2160-9020
Indexed CPCI-S(ISTP)
Appears in Collections: 信息科学技术学院
区域光纤通信网与新型光通信系统国家重点实验室

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