Title | Additional Degree of Freedom in Interleaved Junction Silicon Modulators against Efficiency-energy Conflict |
Authors | Li, Xinbai Yang, Fenghe Li, Tiantian Deng, Qingzhong Chen, Ruobing Michel, Jurgen Zhou, Zhiping |
Affiliation | Peking Univ, Sch Elect Engn & Comp Sci, State Key Lab Adv Opt Commun Syst & Networks, Beijing 100871, Peoples R China. MIT, MIT Microphoton Ctr, 77 Massachusetts Ave, Cambridge, MA 02139 USA. |
Issue Date | 2016 |
Publisher | Conference on Lasers and Electro-Optics (CLEO) |
Citation | Conference on Lasers and Electro-Optics (CLEO).2016. |
Abstract | This paper introduces lateral contribution into interleaved junction. Numerical analysis suggests light-carrier overlap enhancement. V pi L pi and energy consumption can both surpass lateral junction performance as opposed to conventional interleaved junction suffering from efficiency-energy conflict. |
URI | http://hdl.handle.net/20.500.11897/459728 |
ISSN | 2160-9020 |
Indexed | CPCI-S(ISTP) |
Appears in Collections: | 信息科学技术学院 区域光纤通信网与新型光通信系统国家重点实验室 |