| Title | Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate |
| Authors | Cui, Guodong Han, Dedong Yu, Wen Shi, Pan Zhang, Yi Huang, Lingling Cong, Yingying Zhou, Xiaoliang Zhang, Xiaomi Zhang, Shengdong Zhang, Xing Wang, Yi |
| Affiliation | Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China. |
| Keywords | AMORPHOUS OXIDE SEMICONDUCTORS ROOM-TEMPERATURE PERFORMANCE DIELECTRICS |
| Issue Date | 2016 |
| Publisher | International Conference on Solid State Devices and Materials (SSDM) |
| Citation | International Conference on Solid State Devices and Materials (SSDM).2016,55(4,SI). |
| Abstract | By applying a novel active layer of titanium zinc oxide (TiZO), we have successfully fabricated fully transparent thin-film transistors (TFTs) with a bottom gate structure fabricated on a flexible plastic substrate at low temperatures. The effects of various oxygen partial pressures during channel deposition were studied to improve the device performance. We found that the oxygen partial pressure during channel deposition has a significant impact on the performance of TiZO TFTs, and that the TFT developed under 10% oxygen partial pressure exhibits superior performance with a low threshold voltage (V-th) of 2.37V, a high saturation mobility (mu(sat)) of 125.4 cm(2)V(-1)s(-1), a steep subthreshold swing (SS) of 195mV/decade and a high I-on/I-off ratio of 3.05 x 10(8). These results suggest that TiZO thin films are promising for high-performance fully transparent flexible TFTs and displays. (C) 2016 The Japan Society of Applied Physics |
| URI | http://hdl.handle.net/20.500.11897/459010 |
| ISSN | 0021-4922 |
| DOI | 10.7567/JJAP.55.04EK06 |
| Indexed | SCI(E) |
| Appears in Collections: | 信息科学技术学院 深圳研究生院待认领 |
