| Title | IMPACT OF STI STRESS ON 40-NM DOGBONE LAYOUT N-MOSFETS |
| Authors | Wang, Liu Li, Liubin Wang, Lei Jiang, Lele Wei, Tai Cheng, Yuhua |
| Affiliation | Peking Univ, ShangHai Res Inst MicroElect SHRIME, Shanghai, Peoples R China. Peking Univ, Sch Elect Engn & Comp Sci EECS, Beijing, Peoples R China. Peking Univ, ShangHai Res Inst MicroElect SHRIME, Shanghai, Peoples R China. Wang, L (reprint author), Peking Univ, Sch Elect Engn & Comp Sci EECS, Beijing, Peoples R China. |
| Keywords | PERFORMANCE |
| Issue Date | 2016 |
| Publisher | China Semiconductor Technology International Conference (CSTIC) |
| Citation | China Semiconductor Technology International Conference (CSTIC).2016. |
| Abstract | Based on the test structures and silicon measurement data done at 40nm technology, we analyze the impact of varying length between the contacted active-area and gate (S) on the performance of NMOS dogbone devices, such as saturation drain current (Idsat), threshold voltage (Vth). and leakage current (loff). The experiments show that as the length between the contacted active area and gate (S) is increased from 0.07um to 5.02um, both Idsat and loff reach the maximum at 0.62um and then gradually decrease, while Vth has a 19.7% monotonic decrease. |
| URI | http://hdl.handle.net/20.500.11897/450098 |
| Indexed | CPCI-S(ISTP) |
| Appears in Collections: | 上海微电子研究院 信息科学技术学院 |
