| Title | High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS2 |
| Authors | Wu, Dianzhong Zhang, Zhiyong Lv, Danhui Yin, Guoli Peng, Zhijian Jin, Chuanhong |
| Affiliation | China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China. Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China. Peking Univ, Dept Elect, Beijing 100871, Peoples R China. Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China. Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China. China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China. Zhang, ZY (reprint author), Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China. Zhang, ZY (reprint author), Peking Univ, Dept Elect, Beijing 100871, Peoples R China. |
| Keywords | MoS2 Field-Effect Transistors Top-Gate Mobility Inverter ATOMIC LAYERS LARGE-AREA PHASE GROWTH GRAPHENE FILMS |
| Issue Date | 2016 |
| Publisher | MATERIALS EXPRESS |
| Citation | MATERIALS EXPRESS.2016,6,(2),198-204. |
| Abstract | Monolayer MoS2 with large area and high quality are grown using chemical vapor deposition (CVD) on Si/SiO2 substrate, the triangle grain size is about 50 mu m, and top-gated field-effect transistors (FETs) were fabricated using atomic layer deposition (ALD) grown HfO2 at low temperature as high-k gate insulator. The transistors present typical n-type field-effect properties, especially with high carrier mobility up to about 36.4 cm(2)/Vs, which is the highest value of mobility of top gated transistors based on CVD-derived single layer MoS2. Two kinds of methods were used to extract mobility from the measured properties of FETs, and the consistent results indicated the retrieved mobility was reliable. In addition an inverter circuit with gain larger than 1 was constructed based on the n-type FETs. |
| URI | http://hdl.handle.net/20.500.11897/438329 |
| ISSN | 2158-5849 |
| DOI | 10.1166/mex.2016.1289 |
| Indexed | SCI(E) |
| Appears in Collections: | 纳米器件物理与化学教育部重点实验室 信息科学技术学院 |
