| Title | 1550-nm Evanescent Hybrid InGaAsP-Si Laser With Buried Ridge Stripe Structure |
| Authors | Yu, Hongyan Yuan, Lijun Tao, Li Chen, Weixi Li, Yanping Ding, Ying Ran, Guangzhao Pan, Jiaoqing Wang, Wei |
| Affiliation | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. Univ Glasgow, Sch Engn, Elect & Nanoscale Engn, Glasgow G12 8LT, Lanark, Scotland. Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. Ran, GZ (reprint author), Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. |
| Keywords | Hybrid laser buried ridge stripe (BRS) structure selective area metal bonding (SAMB) method PHOTONIC-CRYSTAL LASERS INSULATOR WAVE-GUIDE OPTICAL INTERCONNECTS SILICON TECHNOLOGY |
| Issue Date | 2016 |
| Publisher | IEEE PHOTONICS TECHNOLOGY LETTERS |
| Citation | IEEE PHOTONICS TECHNOLOGY LETTERS.2016,28,(10),1146-1149. |
| Abstract | An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on a selective area metal bonding method is demonstrated. There are the advantages of good optical field, high thermal performance, and improved carrier and photon confinement by adopting this BRS laser structure. The III-V waveguide with the first-order grating corrugations is fabricated by conventional holographic lithography and standard photolithography. A threshold current as low as 5 mA at room temperature in continuous-wave operation and a side-mode suppression ratio as high as 40 dB with mode-hop free higher than 45 degrees C were achieved. |
| URI | http://hdl.handle.net/20.500.11897/437254 |
| ISSN | 1041-1135 |
| DOI | 10.1109/LPT.2016.2532926 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
