| Title | Highly conductive Zinc-Tin-Oxide buffer layer for inverted polymer solar cells |
| Authors | Yu, Leiming Luo, Deying Wang, Hai Zou, Taoyu Luo, Li Qiao, Zhenfang Yang, Yiji Zhao, Jianhong He, Taoling Liu, Zhu Lu, Zheng-Hong |
| Affiliation | Kunming Univ, Key Lab Yunnan Prov Higher Educ Inst Organ Optoel, Kunming 650214, Peoples R China. Yunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R China. Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada. Peking Univ, Sch Phys, Inst Modern Opt, Beijing 100871, Peoples R China. Kunming Univ, Key Lab Yunnan Prov Higher Educ Inst Organ Optoel, Kunming 650214, Peoples R China. Liu, Z (reprint author), Yunnan Univ, Dept Phys, Kunming 650091, Yunnan, Peoples R China. Lu, ZH (reprint author), Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada. |
| Keywords | Inverted polymer solar cells Solution processing Trap-assisted recombination Zinc tin oxide Mobility HIGH-PERFORMANCE THIN-FILMS INTENSITY DEPENDENCE INTERFACIAL LAYER ELECTRODES VOLTAGE |
| Issue Date | 2016 |
| Publisher | ORGANIC ELECTRONICS |
| Citation | ORGANIC ELECTRONICS.2016,33,156-163. |
| Abstract | Thin-films of Zinc Tin Oxide (ZTO) with an extremely high charge carrier mobility and superior optical transmittance are synthesized using a simple solution method. These ZTO films have been systematically studied for the application in inverted polymer solar cells (PSCs). The Hall effects measurements show that the charge mobility of the ZTO semiconductor is over 16.5 cm(2).V-1.S-1, which is the highest mobility value ever reported for oxide buffer made by using solution process. By applying the ZTO buffer layer in the inverted PSCs of P3HT:PC61BM, the power conversion efficiency of the device is 30% higher than that of the devices made with other common buffer layers such as ZnO and TiO2. Light intensity-dependent JV studies and PL measurements also indicate that ZTO buffer layer reduces surface recombination. This work demonstrates that the solution-synthesized ZTO is a promising new buffer layer with superior electron extraction capability for the solar cells. (C) 2016 Elsevier B.V. All rights reserved. |
| URI | http://hdl.handle.net/20.500.11897/437220 |
| ISSN | 1566-1199 |
| DOI | 10.1016/j.orgel.2016.02.043 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 |
