Title Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses
Authors Xia, Jing
Li, Xuan-Ze
Huang, Xing
Mao, Nannan
Zhu, Dan-Dan
Wang, Lei
Xu, Hua
Meng, Xiang-Min
Affiliation Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China.
Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Ctr Nanochem, Beijing 100871, Peoples R China.
Shaanxi Normal Univ, Sch Mat Sci & Engn, Xian 710062, Peoples R China.
Keywords LAYER BLACK PHOSPHORUS
FIELD-EFFECT TRANSISTORS
DISULFIDE ATOMIC LAYERS
ION BATTERIES
GRAPHENE
GROWTH
SPECTROSCOPY
ORIENTATION
TRANSPORT
SPECTRA
Issue Date 2016
Publisher NANOSCALE
Citation NANOSCALE.2016,8,(4),2063-2070.
Abstract Anisotropic layered semiconductors have attracted significant interest due to the huge possibility of bringing new functionalities to thermoelectric, electronic and optoelectronic devices. Currently, most reports on anisotropy have concentrated on black phosphorus and ReS2, less effort has been contributed to other layered materials. In this work, two-dimensional (2D) orthorhombic SnS flakes on a large scale have been successfully synthesized via a simple physical vapor deposition method. Angle-dependent Raman spectroscopy indicated that the orthorhombic SnS flakes possess a strong anisotropic Raman response. Under a parallel-polarization configuration, the peak intensity of A(g) (190.7 cm(-1)) Raman mode reaches the maximum when incident light polarization is parallel to the armchair direction of the 2D SnS flakes, which strongly suggests that the Ag (190.7 cm(-1)) mode can be used to determine the crystallographic orientation of the 2D SnS. In addition, temperature-dependent Raman characterization confirmed that the 2D SnS flakes have a higher sensitivity to temperature than graphene, MoS2 and black phosphorus. These results are useful for the future studies of the optical and thermal properties of 2D orthorhombic SnS.
URI http://hdl.handle.net/20.500.11897/435722
ISSN 2040-3364
DOI 10.1039/c5nr07675g
Indexed SCI(E)
EI
PubMed
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