| Title | Intersubb and transitions in Al0.82Ino.18N/GaN single quantum well |
| Authors | Wang Yuzhou Li Ding Li Lei Liu Ningyang Liu Lei Cao Wenyu Chen Weihua Hu Xiaodong |
| Affiliation | School of Physics, Peking University |
| Keywords | Al0.82Ino.18N/GaN single quantum well optoelectronic devices mid-infrared intersub-b and transition |
| Issue Date | 2011 |
| Publisher | Chinese Physics. B |
| Citation | Chinese Physics. B.2011,20(9),094207-1-094207-6. |
| Abstract | The influence of the width of a lattice-matched Al_(0.82)In_(0.18)N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrodinger and Poisson equations self-consistently. The wavelength of 1-2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 μm to 3.59 μm. The absorption coefficients of 1-2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1-3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 μm to near 2.11 μm. The absorption coefficients of 1-3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the Al0.82In0.18N/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW. |
| URI | http://hdl.handle.net/20.500.11897/419967 |
| Indexed | 中国科技核心期刊(ISTIC) 中国科学引文数据库(CSCD) |
| Appears in Collections: | 物理学院 |
