Short-channel SOI MOSFET model considering total dose effects

Abstract

A new approach was proposed to model the total dose effects on silicon-on-insulator (SOI) devices for circuit simulation. The fully continuous compact SOI MOSFET model can automatically account for the correct body depletion condition, without assuming a priori charge partitioning or constant surface potential. It can also account for the transition between FD and PD behavior that occurs in the practical devices. The model was validated by the comparative result between the simulated and measured post-radiation device characteristics of thin-film SOI MOSFET fabricated on SIMOX wafer.