Distortion analysis of SOI MOSFET for mixed mode integrated circuit application

Abstract

The distortion behavior of Silicon-On-Insulator (SOI) MOSFET is systematically discussed. With Power series analysis method, the harmonic distortion of different configurations of SOI devices (PD,FD and BC) is experimentally investigated. At the same time, a continuous distortion model for SOI MOSFET is presented by including the main distortion-causing mechanisms and the smoothing function. The accuracy of this model is verified by reproducing the experimental data. The results can be used to evaluate the distortion behavior of mixed mode integrated circuit and serve as a guideline for the optimization of low distortion application.