| Title | Effects of dislocation on high temperature transport characteristics of unintentionally doped GaN |
| Authors | Wang Mao-Jun Shen Bo Xu Fu-Jun Wang Yan Xu Jian Huang Sen Yang Zhi-Jian Qin Zhi-Xin Zhang Guo-Yi |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. |
| Keywords | VAPOR-PHASE EPITAXY ALGAN/GAN HEMTS FILMS HETEROSTRUCTURES VACANCIES SAPPHIRE |
| Issue Date | 2007 |
| Publisher | chinese physics letters |
| Citation | CHINESE PHYSICS LETTERS.2007,24,(6),1682-1685. |
| Abstract | High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperature to 500 degrees C. The increment of electron concentration from room temperature to 500 degrees C is found to vary largely for different samples. The dispersion of temperature dependence of electron concentration is found to be directly proportional to the density of dislocations in GaN layers calculated by fitting the FWHM of the rocking curves in x-ray diffraction measurements (XRD). The buildup levels in persistent photoconductivity (PPC) are also shown to be directly proportional to the density of dislocations. The correlation of XRD, Hall and PPC results indicate that the high temperature dependence of electron density in unintentional doped GaN is directly dislocation related. |
| URI | http://hdl.handle.net/20.500.11897/397922 |
| ISSN | 0256-307X |
| Indexed | SCI(E) 中国科技核心期刊(ISTIC) 中国科学引文数据库(CSCD) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
