Title Growth and stability of ultra-thin Pb films on Pb/Si(111)-��-��3 �� ��3
Authors Li, Wen-Juan
Sun, Yu-Jie
Zhu, Xie-Gang
Wang, Guang
Zhang, Yan-Feng
Jia, Jin-Feng
Ma, Xucun
Chen, Xi
Xue, Qi-Kun
Affiliation Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
Academy for Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871, China
Department of Physics, Shanghai JiaoTong University, Shanghai 200240, China
Issue Date 2011
Publisher surface review and letters
Citation Surface Review and Letters.2011,18,(1-2),77-82.
Abstract Ultra-thin Pb films with magic thicknesses of 2 monolayer (ML), 4 ML and 6 ML were prepared of atomically flat on the substrate of Si(111)-??-??3 ?? ??3 (or SIC phase) at 145 K. Their surface morphologies and stability were studied by low temperature scanning tunneling microscopy and temperature-dependent angle resolved photoemission spectroscopy. We found that the well ordered SIC interface can lower the diffusion barrier and enhance the interface charge transfer, leading to different critical thickness compared to Pb/Si(111)-7 ?? 7 grown under same conditions. Enhanced thermal expansion coefficients were also observed in ultra-thin Pb films at low temperature. ? 2011 World Scientific Publishing Company.
URI http://hdl.handle.net/20.500.11897/395193
ISSN 0218625X
DOI 10.1142/S0218625X11014473
Indexed SCI(E)
EI
Appears in Collections: 工学院

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