| Title | The effect of the electron-phonon coupling on the thermal conductivity of silicon nanowires |
| Authors | Wan, Wenhui Xiong, Bangguo Zhang, Wenxing Feng, Ji Wang, Enge |
| Affiliation | Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. Peking Univ, Sch Phys, Beijing 100871, Peoples R China. Taiyuan Univ Technol, Dept Phys, Taiyuan 030024, Peoples R China. |
| Keywords | SEMICONDUCTOR NANOWIRE DEPENDENCE MODES |
| Issue Date | 2012 |
| Publisher | journal of physics condensed matter |
| Citation | JOURNAL OF PHYSICS-CONDENSED MATTER.2012,24,(29). |
| Abstract | The thermal conductivity of free-standing silicon nanowires (SiNWs) with diameters from 1-3 nm has been studied by using the one-dimensional Boltzmann's transport equation. Our model explicitly accounts for the Umklapp scattering process and electron-phonon coupling effects in the calculation of the phonon scattering rates. The role of the electron-phonon coupling in the heat transport is relatively small for large silicon nanowires. It is found that the effect of the electron-phonon coupling on the thermal conduction is enhanced as the diameter of the silicon nanowires decreases. Electrons in the conduction band scatter low-energy phonons effectively where surface modes dominate, resulting in a smaller thermal conductivity. Neglecting the electron-phonon coupling leads to overestimation of the thermal transport for ultra-thin SiNWs. The detailed study of the phonon density of states from the surface atoms and central atoms shows a better understanding of the nontrivial size dependence of the heat transport in silicon nanowire. |
| URI | http://hdl.handle.net/20.500.11897/393207 |
| ISSN | 0953-8984 |
| DOI | 10.1088/0953-8984/24/29/295402 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 |
