Title | Bending effects on lasing action of semiconductor nanowires |
Authors | Yang, Weisong Ma, Yaoguang Wang, Yipei Meng, Chao Wu, Xiaoqin Ye, Yu Dai, Lun Tong, Limin Liu, Xu Yang, Qing |
Affiliation | Zhejiang Univ, Dept Opt Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China. Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. Peking Univ, Dept Phys, Beijing 100871, Peoples R China. |
Keywords | WAVE-GUIDES SILICON STRAIN LASERS NANOLASER DEVICES LOSSES |
Issue Date | 2013 |
Publisher | 光学快报 |
Citation | OPTICS EXPRESS.2013,21,(2),2024-2031. |
Abstract | High flexibility has been one of advantages for one-dimensional semiconductor nanowires (NWs) in wide application of nanoscale integrated circuits. We investigate the bending effects on lasing action of CdSe NWs. Threshold increases and differential efficiency decreases gradually when we decrease the bending radius step by step. Red shift and mode reduction in the output spectra are also observed. The bending loss of laser oscillation is considerably larger than that of photoluminescence (PL), and both show the exponential relationship with the bending radius. Diameter and mode dependent bending losses are investigated. Furthermore, the polarizations of output can be modulated linearly by bending the NWs into different angles continuously. (C) 2013 Optical Society of America |
URI | http://hdl.handle.net/20.500.11897/392095 |
ISSN | 1094-4087 |
DOI | 10.1364/OE.21.002024 |
Indexed | SCI(E) EI |
Appears in Collections: | 人工微结构和介观物理国家重点实验室 |