Title Bending effects on lasing action of semiconductor nanowires
Authors Yang, Weisong
Ma, Yaoguang
Wang, Yipei
Meng, Chao
Wu, Xiaoqin
Ye, Yu
Dai, Lun
Tong, Limin
Liu, Xu
Yang, Qing
Affiliation Zhejiang Univ, Dept Opt Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China.
Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.
Peking Univ, Dept Phys, Beijing 100871, Peoples R China.
Keywords WAVE-GUIDES
SILICON
STRAIN
LASERS
NANOLASER
DEVICES
LOSSES
Issue Date 2013
Publisher 光学快报
Citation OPTICS EXPRESS.2013,21,(2),2024-2031.
Abstract High flexibility has been one of advantages for one-dimensional semiconductor nanowires (NWs) in wide application of nanoscale integrated circuits. We investigate the bending effects on lasing action of CdSe NWs. Threshold increases and differential efficiency decreases gradually when we decrease the bending radius step by step. Red shift and mode reduction in the output spectra are also observed. The bending loss of laser oscillation is considerably larger than that of photoluminescence (PL), and both show the exponential relationship with the bending radius. Diameter and mode dependent bending losses are investigated. Furthermore, the polarizations of output can be modulated linearly by bending the NWs into different angles continuously. (C) 2013 Optical Society of America
URI http://hdl.handle.net/20.500.11897/392095
ISSN 1094-4087
DOI 10.1364/OE.21.002024
Indexed SCI(E)
EI
Appears in Collections: 人工微结构和介观物理国家重点实验室

Files in This Work
There are no files associated with this item.

Web of Science®


7

Checked on Last Week

Scopus®



Checked on Current Time

百度学术™


0

Checked on Current Time

Google Scholar™





License: See PKU IR operational policies.