| Title | Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors |
| Authors | Lou, Haijun Li, Dan Dong, Yan Lin, Xinnan Yang, Shengqi He, Jin Chan, Mansun |
| Affiliation | Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China. Beijing Univ Technol, Sch Software Engn, Beijing 100022, Peoples R China. Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Hong Kong Inst, Shenzhen 518057, Peoples R China. Hong Kong Univ Sci & Technol, Dept ECE, Kowloon, Hong Kong, Peoples R China. |
| Keywords | DOUBLE-GATE MOSFETS NANOWIRE TRANSISTORS ELECTRICAL CHARACTERISTICS CROSS-SECTION NM |
| Issue Date | 2013 |
| Publisher | 日本应用物理学杂志 |
| Citation | JAPANESE JOURNAL OF APPLIED PHYSICS.2013,52,(10). |
| Abstract | In this work, the subthreshold characteristics of a junctionless multigate transistor (JMT) with a trapezoidal fin cross section are studied by three-dimensional simulations. The effects of sidewall angle (Theta) on subthreshold swing (SS) and drain-induced barrier lowering (DIBL) are evaluated and compared with the effects of doping concentration. The results show that SS and DIBL are strongly dependent on Theta and more seriously affected by Theta variation. Meanwhile, as compared with those observed in inversion-mode multigate MOSFETs (IM-MuGFETs), the variations in SS and DIBL in JMTs with sidewall angle are better suppressed. A design guideline is finally proposed to define the optimal parameters of JMTs for a given technology. (C) 2013 The Japan Society of Applied Physics |
| URI | http://hdl.handle.net/20.500.11897/391070 |
| ISSN | 0021-4922 |
| DOI | 10.7567/JJAP.52.104302 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 信息工程学院 |
