| Title | 1.06-mu m InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure |
| Authors | Wang, Huolei Mi, Junping Zhou, Xuliang Meriggi, Laura Steer, Matthew Cui, Bifeng Chen, Weixi Pan, Jiaoqing Ding, Ying |
| Affiliation | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland. Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China. Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. Peking Univ, Sch Phys, Beijing 100871, Peoples R China. |
| Keywords | 1.55 MU-M LASING CHARACTERISTICS VERTICAL-CAVITY DEVICE DESIGN GATE |
| Issue Date | 2013 |
| Publisher | 光学通讯 |
| Citation | OPTICS LETTERS.2013,38,(22),4868-4871. |
| Abstract | InGaAs/GaAs multiple quantum well (MQW)-depleted optical thyristor lasers operating at 1.06 mu m with a waveguide-type PiNiN structure is presented for the first time. The optical thyristor lasers clearly show nonlinear S-shaped current-voltage and lasing characteristics. The measured switching voltage and current are 5 V and 1 mA, respectively. The holding voltage and current are 2.6 V and 3.6 mA, respectively. A relatively high output light power of 30 mW per facet at room temperature is achieved. The lasing wavelength is 1.055 mu m at a bias current of 80 mA at 25 degrees C. (C) 2013 Optical Society of America |
| URI | http://hdl.handle.net/20.500.11897/390868 |
| ISSN | 0146-9592 |
| DOI | 10.1364/OL.38.004868 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 人工微结构和介观物理国家重点实验室 |
