Title Generation and electric control of spin-valley-coupled circular photogalvanic current in WSe2
Authors Yuan, Hongtao
Wang, Xinqiang
Lian, Biao
Zhang, Haijun
Fang, Xianfa
Shen, Bo
Xu, Gang
Xu, Yong
Zhang, Shou-Cheng
Hwang, Harold Y.
Cui, Yi
Affiliation Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA.
SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA.
Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China.
Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China.
Keywords INSULATOR-TRANSITION
ROOM-TEMPERATURE
POLARIZATION
TRANSISTORS
FIELD
SEMICONDUCTOR
PHOTOCURRENTS
SPINTRONICS
COHERENCE
MOS2
Issue Date 2014
Publisher nature nanotechnology
Citation NATURE NANOTECHNOLOGY.2014,9,(10),851-857.
Abstract The valley degree of freedom in layered transition-metal dichalcogenides provides an opportunity to extend the functionalities of spintronics and valleytronics devices. The achievement of spin-coupled valley polarization induced by the non-equilibrium charge-carrier imbalance between two degenerate and inequivalent valleys has been demonstrated theoretically and by optical experiments. However, the generation of a valley and spin current with the valley polarization in transition-metal dichalcogenides remains elusive. Here we demonstrate a spin-coupled valley photocurrent, within an electric-double-layer transistor based on WSe2, whose direction and magnitude depend on the degree of circular polarization of the incident radiation and can be further modulated with an external electric field. This room-temperature generation and electric control of a valley and spin photocurrent provides a new property of electrons in transition-metal dichalcogenide systems, and thereby enables additional degrees of control for quantum-confined spintronic devices.
URI http://hdl.handle.net/20.500.11897/342236
ISSN 1748-3387
DOI 10.1038/NNANO.2014.183
Indexed SCI(E)
PubMed
Appears in Collections: 物理学院
人工微结构和介观物理国家重点实验室

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