| Title | A compact model of diode array for Phase Change Memory |
| Authors | Su, Yanmei Wang, Laidong Wang, Ruonan Zhang, Xukai Wei, Yiqun Wang, Wei Ma, Yong Lin, Xinnan He, Jin |
| Affiliation | Key Laboratory of Integrated Microsystems, School of Computer and Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China Peking University, Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, Shenzhen 518057, China |
| Issue Date | 2010 |
| Citation | 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010.Hong Kong, China. |
| Abstract | In this paper, a compact diode array model for Phase Change Memory (PCM) application is presented. From the diode array structure and numerical simulation result, a quasi-physical compact model is proposed by combining the classical diode equation and simplified bipolar device formulation. This model results in accurate calculation of different leakage current components with parameter setting. Furthermore, the presented model is an open model structure, and can be applied in different fabrication process with the parameter extraction. All these characteristics make it useful in further study of physical mechanism of carrier transmissions in order to illustrate the device physics of such an array diode device. ? 2010 IEEE. |
| URI | http://hdl.handle.net/20.500.11897/329735 |
| DOI | 10.1109/EDSSC.2010.5713734 |
| Indexed | EI |
| Appears in Collections: | 深圳研究生院待认领 |
