| Title | A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance |
| Authors | Guo, Xinjie Wang, Shaodi Ma, Chenyue Zhang, Chenfei Lin, Xinnan Wu, Wen He, Frank Wang, Wenping Liu, Zhiwei Zhao, Wei Yang, Shengqi |
| Affiliation | Key Laboratory of Integrated Microsystems, School of Computer and Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China Peking University, Shenzhen SOC Key Laboratory, Shenzhen 518057, China School of Comm. and Info. Eng., Shanghai University, Shanghai 200072, China |
| Issue Date | 2010 |
| Citation | 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010.Hong Kong, China. |
| Abstract | This paper developed a full three-dimensional (3-D) statistical simulation approach to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic parameter fluctuations at fixed LER parameters are studied in carefully designed simulation experiments. The result shows that Fin-width LER causes a dramatic shift and fluctuations in threshold voltage. The simulation results also imply that the velocity saturation effect may come into effect even under low drain voltage due to LER effect. ? 2010 IEEE. |
| URI | http://hdl.handle.net/20.500.11897/329666 |
| DOI | 10.1109/EDSSC.2010.5713678 |
| Indexed | EI |
| Appears in Collections: | 深圳研究生院待认领 |
