| Title | Formation of special shaped carrier distribution by MeV multi-energy boron ion implantation into crystal silicon |
| Authors | Kang, Yixiu Zhao, Weijiang Wang, Yugang Zhang, Lichun Yu, F.C. |
| Affiliation | Peking Univ, Beijing, China |
| Issue Date | 1995 |
| Publisher | pan tao ti hsueh paochinese journal of semiconductors |
| Citation | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors.1995,16,(10),772-778. |
| Abstract | For the propose of design device, a method of formation of special shaped carrier distribution by Me?? V multi-energy boron ion implantation into crystal silicon was studied. After 0.5-2.4MeV B ion implantation into crystal Si and after 1070??C,20s RTA treatments, the carrier concentration profiles from SRP measurements were obtained. As the starting point, single-energy ion implantation and double-energy ion implantation were studied. Pearson and half-Gauss functions were used to fit the carrier concentration profiles of single-energy ion implantation, and the fitting of Pearson function is better than that of the half-Gauss function. The dependence of projected range Rp, range straggling ??, skewness ?? and kurtosis ?? of the measured data on incident energy E were given by polynomials. From the experiments of double-energy ion implantation, the effect of the different implantation sequence was investigated. At last, by using linear superposition of single-energy ion implantation, an uniform carrier profile is obtained by multi-energy ion implantation. |
| URI | http://hdl.handle.net/20.500.11897/302900 |
| ISSN | 02534177 |
| Indexed | EI |
| Appears in Collections: | 物理学院 信息科学技术学院 |
