| Title | Improvement of doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices with interlayer by suppressing donor-like defects |
| Authors | Liu Ning-Yang Liu Lei Wang Lei Yang Wei Li Ding Li Lei Cao Wen-Yu Lu Ci-Mang Wan Cheng-Hao Chen Wei-Hua Hu Xiao-Dong |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. |
| Keywords | superlattice doping efficiency strain modulation nitrogen vacancy MG-DOPED GAN PHOTOLUMINESCENCE SEMICONDUCTORS LAYERS |
| Issue Date | 2012 |
| Publisher | chinese physics b |
| Citation | CHINESE PHYSICS B.2012,21,(11). |
| Abstract | We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices (SLs). It is shown that the hole concentration of SLs increases by nearly an order of magnitude, from 1.1x10(17) to 9.3x10(17) cm(-3), when an AlN interlayer is inserted to modulate the strains. Schrodinger Poisson self-consistent calculations suggest that such an increase could be attributed to the reduction of donor-like defects caused by the strain modulation induced by the AlN interlayer. Additionally, the donor-acceptor pair emission exhibits a remarkable decrease in intensity of the cathodoluminescence spectrum for SLs with an AlN interlayer. This supports the theoretical calculations and indicates that the strain modulation of SLs could be beneficial to the donor-like defect suppression as well as the p-type doping efficiency improvement. |
| URI | http://hdl.handle.net/20.500.11897/296775 |
| ISSN | 1674-1056 |
| DOI | 10.1088/1674-1056/21/11/117304 |
| Indexed | SCI(E) EI 中国科技核心期刊(ISTIC) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
