| Title | A novel mixed-voltage I/O buffer with low-voltage thin-oxide CMOS transistors |
| Authors | Guo, Haibing Wang, Yuan Jia, Song Zhang, Ganggang Zhang, Xing |
| Affiliation | Shenzhen Graduate School, Peking University, Shenzhen, China Institute of Microelectronics, Peking University, Beijing, China |
| Issue Date | 2014 |
| Citation | 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014.Chengdu, China. |
| Abstract | A novel mixed-voltage I/O buffer only used thin gate-oxide transistors is presented in this paper. This new design can successfully avoid the undesired leakage current paths and the gate-oxide reliability that occur in the conventional mixed-voltage CMOS I/O buffers. With the use of a bootstrapped circuit to increase the gate voltage of the related NMOS devices, the power supply voltage could be transmitted entirely without threshold-voltage loss. ? 2014 IEEE. |
| URI | http://hdl.handle.net/20.500.11897/295586 |
| ISSN | 9781479923342 |
| DOI | 10.1109/EDSSC.2014.7061268 |
| Indexed | EI |
| Appears in Collections: | 深圳研究生院待认领 信息科学技术学院 |
