| Title | Highly sensitive detection of DNA with HNA defined silicon nanowire FET |
| Authors | Dong, Li Yu, Xiaomei |
| Affiliation | National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Institute of Microelectronics, Peking University, Beijing 100871, China |
| Issue Date | 2013 |
| Citation | 17th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2013.Freiburg, Germany,1(167-169). |
| Abstract | We herein developed a simple method to process a silicon nanowire field-effect transistor (SiNW-FET) sensor by using HNA to define the nanowire and top-down fabrication method. Problems caused by the dry and TMAH etchings were effectively avoided, and the surface to volume ratio of the nanowire was increased by the HNA etching at the same time. After SiNWs were covalently modified with DNA probes, the detections on target Norovirus DNA were successfully realized with the concentration as low as lfM and the respond time of a few seconds. The mismatch discrimination ability for single nucleotide polymorphism (SNP) detection was also experimentally certified. This work provides an efficient way for the DNA detection with mass manufacturing ability and potential compatibility with the conventional silicon industry, which definitely facilitate the practical applications. Copyright ? (2013) by the Chemical and Biological Microsystems Society All rights reserved. |
| URI | http://hdl.handle.net/20.500.11897/294627 |
| ISSN | 9781632666246 |
| Indexed | EI |
| Appears in Collections: | 信息科学技术学院 |
