| Title | Analysis of Electrostatic Crosstalk in 3D Vertical NAND Charge Trapping Memory with Junction less GAA Nanowire FET |
| Authors | Wang, Yijiao Liu, Xiaoyan Yang, Yunxiang Qin, Jieyu Du, Gang Kang, Jinfeng |
| Affiliation | Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. |
| Issue Date | 2012 |
| Citation | 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012).. |
| Abstract | The electrostatic crosstalk in the 3D vertical CTM (Charge Trapping Memory) NAND NVM is investigated with various typical operation conditions. The junctionless FET of GAA (Gate-All-Around) nanowire with O/N/O (Oxide/Nitride/Oxide) dielectrics is simulated as the storage cell. The electrostatic properties of two neighbor cells of a NAND string are evaluated under typical conditions corresponding to the program operation. The results are help to design and optimize the new structures of 3D CTM NAND Flask |
| URI | http://hdl.handle.net/20.500.11897/292706 |
| Indexed | CPCI-S(ISTP) |
| Appears in Collections: | 信息科学技术学院 |
