| Title | Novel technique for measuring etch rate distribution of Si |
| Authors | Yang, Heng Bao, Minhang Shen, Shaoqun Li, Xinxin Zhang, Dacheng Wu, Guoyin |
| Affiliation | Department of Electronic Engineering, Fudan University, 200433, Shanghai, China Institute of Microelectronics, Peking University, 100871, Beijing, China |
| Issue Date | 2000 |
| Publisher | sensors and actuators a physical |
| Citation | Sensors and Actuators, A: Physical.2000,79,(2),136-140. |
| Abstract | Three-dimensional etch rate distribution of Si is necessary in analyzing the anisotropic etching of Si. As three-dimensional etch rate distribution can be composed by a series of two-dimensional distributions, a novel method is suggested in this paper for measuring the two-dimensional distributions with simple tools and high efficiency. For example, vertical sidewalls of a series of U-shaped trenches in (0 mn) silicon wafers are first created by deep reactive ion etching (DRIE) technique. By measuring the etch rates in normal directions of the vertical sidewalls, two-dimensional distributions of etch rate in (0 mn) planes can be found. As the height of vertical sidewalls formed by DRIE can be very large, the planes of sidewall can withstand a relatively long etch time before they are replaced by emerging slow etching planes. No special measuring facilities but a conventional microscope is needed for the measurement. Presented in this paper are etch rate distributions in (001) and (01??1) crystal planes in 40% KOH and 25% TMAH. |
| URI | http://hdl.handle.net/20.500.11897/262745 |
| ISSN | 09244247 |
| DOI | 10.1016/S0924-4247(99)00270-8 |
| Indexed | EI |
| Appears in Collections: | 信息科学技术学院 |
