| Title | Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices |
| Authors | Ma, R. M. Dai, L. Huo, H. B. Yang, W. Q. Qin, G. G. Tan, P. H. Huang, C. H. Zheng, J. |
| Affiliation | Peking Univ, Sch Phys, Beijing 100871, Peoples R China. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. Peking Univ, Sch Chem, Beijing 100871, Peoples R China. Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. |
| Keywords | WURTZITE ZNS NANORIBBONS LUMINESCENCE NANOWIRES GROWTH |
| Issue Date | 2006 |
| Publisher | 应用物理学快报 |
| Citation | APPLIED PHYSICS LETTERS.2006,89,(20). |
| Abstract | High quality n-type CdS nanobelts (NBs) were synthesized via an in situ indium doping chemical vapor deposition method and fabricated into field effect transistors (FETs). The electron concentrations and mobilities of these CdS NBs are around (1.0x10(16)-3.0x10(17))/cm(3) and 100-350 cm(2)/V s, respectively. An on-off ratio greater than 10(8) and a subthreshold swing as small as 65 mV/decade are obtained at room temperature, which give the best performance of CdS nanowire/nanobelt FETs reported so far. n-type CdS NB/p(+)-Si heterojunction light emitting diodes were fabricated. Their electroluminescence spectra are dominated by an intense sharp band-edge emission and free from deep-level defect emissions. (c) 2006 American Institute of Physics. |
| URI | http://hdl.handle.net/20.500.11897/251287 |
| ISSN | 0003-6951 |
| DOI | 10.1063/1.2387982 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 å å¦ä¸ å å å·¥ç¨ å¦é ¢ 人工微结构和介观物理国家重点实验室 |
