| Title | Direct Observations of Retention Failure in Ferroelectric Memories |
| Authors | Gao, Peng Nelson, Christopher T. Jokisaari, Jacob R. Zhang, Yi Baek, Seung-Hyub Bark, Chung Wung Wang, Enge Liu, Yuanming Li, Jiangyu Eom, Chang-Beom Pan, Xiaoqing |
| Affiliation | Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA. Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China. Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China. Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA. Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China. Peking Univ, Sch Phys, Beijing 100871, Peoples R China. Univ Washington, Dept Mech Engn, Seattle, WA 98195 USA. |
| Keywords | ferroelectrics polarization switching data retention failure transmission electron microscopy THIN-FILMS POLARIZATION RETENTION ELECTRODES PHYSICS HETEROSTRUCTURES CAPACITORS NANOSCALE STABILITY MECHANISM DYNAMICS |
| Issue Date | 2012 |
| Publisher | advanced materials |
| Citation | ADVANCED MATERIALS.2012,24,(8),1106-1110. |
| Abstract | Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswiching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss. Copyright ? 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| URI | http://hdl.handle.net/20.500.11897/234551 |
| ISSN | 0935-9648 |
| DOI | 10.1002/adma.201103983 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 量子材料科学中心 物理学院 |
