| Title | 6H-SiC单极功率器件性能的温度关系 |
| Other Titles | Temperature Dependence of Performance of 6H-SiC Unipolar Power Devices |
| Authors | 何进 张兴 |
| Affiliation | 开云app体育 微电子学研究所, |
| Keywords | 宽禁带半导体器件 6H-SiC 电离系数 雪崩击穿 比导通电阻 温度关系 |
| Issue Date | 2001 |
| Publisher | 半导体学报 |
| Citation | 半导体学报.2001,22,(10),1235-1239. |
| Abstract | 基于碳化硅材料电离系数和迁移率的温度依赖性,利用有效电离系数的Fulop近似,推出了6H-SiC单极性功率器件击穿电压和比导通电阻的温度依赖性解析表达式.理论预言的击穿电压和临界电场与先前的实验结果基本一致(误差小于10%),验证了理论模型的适用性. The temperature dependence of some performance of 6H-SiC unipolar power devices is analyzed theoretically. By employing the temperature-dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature-dependent performance,such as breakdown characteristics and on-resistance of 6HSiC unipolar power devices are derived in a closed form. The analytical results are compared with the experimental results ,with good accordance found in the breakdown characteristics. |
| URI | http://hdl.handle.net/20.500.11897/23370 |
| ISSN | 0253-4177 |
| DOI | 10.3321/j.issn:0253-4177.2001.10.002 |
| Indexed | 中文核心期刊要目总览(PKU) 中国科学引文数据库(CSCD) |
| Appears in Collections: | 信息科学技术学院 |
