| Title | Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors |
| Authors | Si, Mengwei Gu, Jiangjiang J. Wang, Xinwei Shao, Jiayi Li, Xuefei Manfra, Michael J. Gordon, Roy G. Ye, Peide D. |
| Affiliation | Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA. Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA. Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA. Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China. Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA. Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA. |
| Keywords | PERFORMANCE CHANNEL MOSFETS |
| Issue Date | 2013 |
| Publisher | 应用物理学快报 |
| Citation | APPLIED PHYSICS LETTERS.2013,102,(9). |
| Abstract | InGaAs gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs) with 6 nm nanowire thickness have been experimentally demonstrated at sub-80 nm channel length. The effects of forming gas anneal (FGA) on the performance of these devices have been systematically studied. The 30min 400 degrees C FGA (4% H-2/96% N-2) is found to improve the quality of the Al2O3/InGaAs interface, resulting in a subthreshold slope reduction over 20mV/dec (from 117mV/dec in average to 93mV/dec). Moreover, the improvement of interface quality also has positive impact on the on-state device performance. A scaling metrics study has been carried out for FGA treated devices with channel lengths down to 20nm, indicating excellent gate electrostatic control. With the FGA passivation and the ultra-thin nanowire structure, InGaAs MOSFETs are promising for future logic applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794846] |
| URI | http://hdl.handle.net/20.500.11897/225296 |
| ISSN | 0003-6951 |
| DOI | 10.1063/1.4794846 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 新材料学院 |
