| Title | Formation of p-n-p junction with ionic liquid gate in graphene |
| Authors | He, Xin Tang, Ning Gao, Li Duan, Junxi Zhang, Yuewei Lu, Fangchao Xu, Fujun Wang, Xinqiang Yang, Xuelin Ge, Weikun Shen, Bo |
| Affiliation | Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China. Jiangsu Univ, Inst Life Sci, Zhenjiang 212013, Jiangsu, Peoples R China. Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China. Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China. |
| Keywords | LAYER GRAPHENE TRANSPORT FILMS TRANSISTORS |
| Issue Date | 2014 |
| Publisher | 应用物理学快报 |
| Citation | APPLIED PHYSICS LETTERS.2014,104,(14). |
| Abstract | Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics. (C) 2014 AIP Publishing LLC. |
| URI | http://hdl.handle.net/20.500.11897/213845 |
| ISSN | 0003-6951 |
| DOI | 10.1063/1.4870656 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 人工微结构和介观物理国家重点实验室 |
