| Title | Picosecond dynamics of a silicon donor based terahertz detector device |
| Authors | Bowyer, Ellis T. Villis, B. J. Li, Juerong Litvinenko, K. L. Murdin, B. N. Erfani, Morteza Matmon, Guy Aeppli, Gabriel Ortega, Jean-Michel Prazeres, Rui Dong, Li Yu, Xiaomei |
| Affiliation | Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England. UCL, London Ctr Nanotechnol, London WC1H 0AH, England. UCL, Dept Phys & Astron, London WC1H 0AH, England. Univ Paris 11, Lab Chem Phys, F-91405 Orsay, France. Peking Univ, Inst Micro Nanoelect, Beijing 100871, Peoples R China. |
| Keywords | RYDBERG STATES GERMANIUM SEMICONDUCTORS MILLIMETER LASER |
| Issue Date | 2014 |
| Publisher | 应用物理学快报 |
| Citation | APPLIED PHYSICS LETTERS.2014,105,(2). |
| Abstract | We report the characteristics of a simple complementary metal-oxide-semiconductor compatible terahertz detector device with low response time (nanoseconds) determined using a short-pulse, high intensity free-electron laser. The noise equivalent power was 1 x 10(-11) W Hz(-1/2). The detector has an enhanced response over narrow bands, most notably at 9.5 THz, with a continuum response at higher frequencies. Using such a device, the dynamics of donors in silicon can be explored, a system which has great potential for quantum information processing. (C) 2014 AIP Publishing LLC. |
| URI | http://hdl.handle.net/20.500.11897/212342 |
| ISSN | 0003-6951 |
| DOI | 10.1063/1.4890526 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 待认领 |
