| Title | Anisotropic and passivation-dependent quantum confinement effects in germanium nanowires: A comparison with silicon nanowires |
| Authors | Jing, Mingwei Ni, Ming Song, Wei Lu, Jing Gao, Zhengxiang Lai, Lin Mei, Wai Ning Yu, Dapeng Ye, Hengqiang Wang, Lu |
| Affiliation | Peking Univ, Dept Phys, Mesoscop Phys Lab, Beijing 100871, Peoples R China. Univ Nebraska, Dept Phys, Omaha, NE 68182 USA. |
| Keywords | OPTICAL-PROPERTIES ELECTRONIC-PROPERTIES 1ST-PRINCIPLES CALCULATIONS CONDUCTION-BAND GE NANOWIRES WIRES NANOCRYSTALS DOTS MOLECULES SURFACES |
| Issue Date | 2006 |
| Publisher | journal of physical chemistry b |
| Citation | JOURNAL OF PHYSICAL CHEMISTRY B.2006,110,(37),18332-18337. |
| Abstract | Electronic structures of hydrogen-passivated germanium nanowires (GeNWs) along the [100], [110], [111], and [112] directions are studied by using the density functional theory within the generalized gradient approximation. The band gaps of the fully relaxed GeNWs along the [100], [110], and [111] directions are all direct at the smaller sizes, while those of the wires along the [112] direction remain indirect. The magnitude of the band gaps of the GeNWs for a given size approximately follows the order of E-g[100] > E-g[ 111] > E-g[ 112] > E-g[ 110]. Compared with silicon nanowires, GeNWs exhibit stronger quantum confinement effects. Replacement of H by the more stable ethine group is found to lead to a weakening of the quantum confinement effects of GeNWs. |
| URI | http://hdl.handle.net/20.500.11897/198706 |
| ISSN | 1520-6106 |
| DOI | 10.1021/jp063518j |
| Indexed | SCI(E) EI PubMed |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
