| Title | Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories |
| Authors | Xu, Nuo Liu, Lifeng Sun, Xiao Liu, Xiaoyan Han, Dedong Wang, Yi Han, Ruqi Kang, Jinfeng Yu, Bin |
| Affiliation | Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. |
| Keywords | COMPLEX |
| Issue Date | 2008 |
| Publisher | 应用物理学快报 |
| Citation | APPLIED PHYSICS LETTERS.2008,92,(23). |
| Abstract | The characteristics and mechanism of conduction/set process in TiN/ZnO/Pt-based resistance random access memory devices with stable and reproducible nanosecond bipolar switching behavior were studied. The dependencies of memory behavior on cell area, operating temperature, and frequency indicate that the conduction mechanism in low-resistance states is due to electrons hopping through filament paths. We also identify that the set process is essentially equivalent to a soft dielectric breakdown associated with a polarization effect caused by the migration of space charges under a low electric field stress. The generation/recovery of oxygen vacancies and nonlattice oxygen ions play a critical role in resistance switching. (C) 2008 American Institute of Physics. |
| URI | http://hdl.handle.net/20.500.11897/152923 |
| ISSN | 0003-6951 |
| DOI | 10.1063/1.2945278 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 信息科学技术学院 |
