| Title | Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique |
| Authors | Guo, Yue An, Xia Huang, Ru Fan, Chunhui Zhang, Xing |
| Affiliation | Peking Univ, Inst Microelect, Beijing 100871, Peoples R China. |
| Keywords | annealing elemental semiconductors germanium germanium alloys ion implantation nickel alloys rectification Schottky barriers Schottky diodes semiconductor-metal boundaries METAL SOURCE/DRAIN INTERFACE TEMPERATURE DEPENDENCE REDUCTION FILMS |
| Issue Date | 2010 |
| Publisher | 应用物理学快报 |
| Citation | APPLIED PHYSICS LETTERS.2010,96,(14). |
| Abstract | In this paper, a method of ion-implantation after germanidation (IAG) has been presented to modulate the Schottky barrier (SB) heights on germanium substrates. Schottky diodes have been fabricated with improved rectifying current curves and larger I(on)/I(off) ratio up to 10(6). A relatively high effective electron barrier height for NiGe/n-Ge has been achieved by the BF(2)(+) IAG technique, which suggests a record-low effective hole barrier height of nearly 0.06 eV. The tuning of SB height can be mainly contributed to the effects of fluorine. In addition, there is a process temperature window between 350 to 450 degrees C for the drive-in annealing of IAG to obtain optimized SB heights. These results provide the design guidelines for the process integration of germanium based Schottky barrier source/drain metal-oxide-semiconductor field-effect transistors. |
| URI | http://hdl.handle.net/20.500.11897/152716 |
| ISSN | 0003-6951 |
| DOI | 10.1063/1.3378878 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 信息科学技术学院 |
