Title | Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors |
Authors | Fan, Jiewen Li, Ming Xu, Xiaoyan Yang, Yuancheng Xuan, Haoran Huang, Ru |
Affiliation | Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China. |
Keywords | Band-to-band tunneling (BTBT) CMOS technology gate-induced drain leakage (GIDL) power consumption silicon nanowire transistors (SNWTs) CMOS TECHNOLOGY MOSFET GIDL DEVICES DESIGN |
Issue Date | 2015 |
Publisher | ieee电子器件汇刊 |
Citation | IEEE TRANSACTIONS ON ELECTRON DEVICES.2015,62,(1),213-219. |
Abstract | In this paper, detailed physical mechanisms of gate-induced drain leakage (GIDL) in gate-all-around silicon nanowire transistors (SNWTs) are investigated and verified by experiments and TCAD studies. The results show that the SNWTs will suffer from a more severe GIDL issue in small diameter (D-nw) devices under low vertical bar V-gs vertical bar. It is believed that this unexpected GIDL problem in SNWTs origins from the longitudinal band-to-band tunneling (L-BTBT) at the body/drain junction enhanced by the strong gate coupling to the depletion region, which usually can be neglected in planar devices. On the other hand, the traditional transverse BTBT (T-BTBT) only dominates at high vertical bar V-gs vertical bar with relatively large D-nw. Systematic study of GIDL dependence on process parameters, including D-nw cross-sectional shape, doping, and overlap length (L-ov), shows that both T-BTBT and L-BTBT can be alleviated by reducing the doping and rounding the corner, but L-BTBT is worsened by reducing D-nw and L-ov despite of the alleviated T-BTBT. As the extension process engineering strongly impacts the short-channel effect and driving current of SNWTs, a GIDL optimization strategy considering the leakage power and device performance is given for low-power SNWT design. |
URI | http://hdl.handle.net/20.500.11897/151941 |
ISSN | 0018-9383 |
DOI | 10.1109/TED.2014.2371916 |
Indexed | SCI(E) EI |
Appears in Collections: | 信息科学技术学院 |