| Title | Epitaxial Heterostructures of Ultrathin Topological Insulator Nanoplate and Graphene |
| Authors | Dang, Wenhui Peng, Hailin Li, Hui Wang, Pu Liu, Zhongfan |
| Affiliation | Peking Univ, Ctr Nanochem, State Key Lab Struct Chem Unstable & Stable Speci, BNLMS,Coll Chem & Mol Engn, Beijing 100871, Peoples R China. |
| Keywords | Topological insulator graphene Dirac materials bismuth selenide van der Waals epitaxy SINGLE DIRAC CONE ELECTRONIC-STRUCTURE RAMAN-SPECTROSCOPY BISMUTH TELLURIDE NANOWIRES NANORIBBONS SURFACE BI2TE3 BI2SE3 SELENIDE |
| Issue Date | 2010 |
| Publisher | nano letters |
| Citation | NANO LETTERS.2010,10,(8),2870-2876. |
| Abstract | The authors present a van der Waals epitaxy of high-quality ultrathin nanoplates of topological insulator Bi2Se3 on a pristine graphene substrate using a simple vapor-phase deposition method. Sub-10-nm-thick nanoplates of layered Bi2Se3 with defined orientations can be epitaxially grown on a few-layer pristine graphene substrate. We show the evolution of Raman spectra with the number of Bi2Se3 layers on few-layer graphene. Bi2Se3 nanoplates with a thickness of three quintuple-layers (3-QL) exhibit the strongest Raman intensity. Strain effects in the Bi2Se3/graphene nanoplate heterostructures is also studied by Raman spectroscopy. 1-QL and 2-QL Bi2Se3 nanoplates experience tensile stress, consistent with compressive stress in single-layer and bilayer graphene substrates. Our results suggest an approach for the synthesis of epitaxial heterostructures that consist of an ultrathin topological insulator and graphene, which may be a new direction for electronic and spintronic applications. |
| URI | http://hdl.handle.net/20.500.11897/150053 |
| ISSN | 1530-6984 |
| DOI | 10.1021/nl100938e |
| Indexed | SCI(E) PubMed |
| Appears in Collections: | å å¦ä¸ å å å·¥ç¨ å¦é ¢ |
