| Title | Direct Growth of High-Quality Graphene on High-kappa Dielectric SrTiO3 Substrates |
| Authors | Sun, Jingyu Gao, Teng Song, Xiuju Zhao, Yanfei Lin, Yuanwei Wang, Huichao Ma, Donglin Chen, Yubin Xiang, Wenfeng Wing, Jian Zhang, Yanfeng Liu, Zhongfan |
| Affiliation | Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Ctr Nanochem CNC, Beijing 100871, Peoples R China. Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China. Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China. China Univ Petr, State Key Lab Heavy Oil Proc, Beijing 102249, Peoples R China. |
| Keywords | CHEMICAL-VAPOR-DEPOSITION METAL-CATALYST LARGE-AREA FILMS SAPPHIRE NITRIDE OXIDES |
| Issue Date | 2014 |
| Publisher | journal of the american chemical society |
| Citation | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY.2014,136,(18),6574-6577. |
| Abstract | High-quality monolayer graphene was synthesized on high-kappa dielectric single crystal SrTiO3 (STO) substrates by a facile metal-catalyst-free chemical vapor deposition process. The as-grown graphene sample was suitable for fabricating a high performance field-effect transistor (FET), followed by a far lower operation voltage compared to that of a SiO2-gated FET and carrier motilities of approximately 870-1050 cm(2).V-1.s(-1) I in air at rt. The directly grown high-quality graphene on STO makes it a perfect candidate for designing transfer-free, energy-saving, and batch production of FET arrays. |
| URI | http://hdl.handle.net/20.500.11897/149705 |
| ISSN | 0002-7863 |
| DOI | 10.1021/ja5022602 |
| Indexed | SCI(E) EI PubMed |
| Appears in Collections: | å å¦ä¸ å å å·¥ç¨ å¦é ¢ 工学院 物理学院 |
