| Title | Scattering behaviour of a two-dimensional electron gas induced by Al composition fluctuation in AlxGa1-xN barriers in AlxGa1-xN/GaN heterostructures |
| Authors | Wang, Yan Shen, Bo Xu, Fu-Jun Huang, Sen Miao, Zhen-Lin Lin, Fang Yang, Zhi-Jian Zhang, Guo |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Artificial Mictostruct & Mesoscop P, Beijing 100871, Peoples R China. |
| Keywords | scattering cathodoluminescence fluctuation ALGAN/GAN HETEROSTRUCTURES PIEZOELECTRIC POLARIZATION PHASE-SEPARATION MOBILITY LAYERS |
| Issue Date | 2009 |
| Publisher | chinese physics b |
| Citation | CHINESE PHYSICS B.2009,18,(5),2002-2005. |
| Abstract | This paper reports that cathodoluminescence (CL) measurements have been done to study the alloy fluctuation of the Al0.3Ga0.7N layer in Al0.3Ga0.7N/GaN heterostructures. The CL images and linescanning results demonstrate the existence of compositional fluctuation of Al in the Al0.3Ga0.7N barrier. A model using a delta-shape perturbation Hamilton function has been proposed to simulate the scattering probability of the two dimensional electron gases (2DEG) induced by Al composition fluctuation. Two factors, including conduction band fluctuation and polarization electric field variation, induced by the Al composition fluctuation have been taken into account. The scattering relaxation time induced by both factors has been estimated to be 0.31 ns and 0.0078 ns, respectively, indicating that the variation of the piezoelectric field is dominant in the scattering of the 2DEG induced by Al fluctuation. |
| URI | http://hdl.handle.net/20.500.11897/148830 |
| ISSN | 1674-1056 |
| DOI | 10.1088/1674-1056/18/5/045 |
| Indexed | SCI(E) EI 中国科技核心期刊(ISTIC) 中国科学引文数据库(CSCD) |
| Appears in Collections: | 物理学院 人工微结构和介观物理国家重点实验室 |
