| Title | Annealing effects on the chemical deposited CdS films and the electrical properties of CdS/CdTe solar cells |
| Authors | Han, Junfeng Liao, Cheng Jiang, Tao Fu, Ganhua Krishnakumar, V. Spanheimer, C. Haindl, G. Zhao, Kui Klein, A. Jaegermann, W. |
| Affiliation | Peking Univ, Sch Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China. Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany. |
| Keywords | Semiconductors Thin films Chemical synthesis Photoelectron spectroscopy Surface properties THIN-FILMS GROWTH BATH |
| Issue Date | 2011 |
| Publisher | 材料研究通报 |
| Citation | MATERIALS RESEARCH BULLETIN.2011,46,(2),194-198. |
| Abstract | CdS layers grown by chemical bath deposition (CBD) are annealed in the oxygen and argon-hydrogen atmosphere respectively. It has been found that the open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen before the deposition of CdTe by close spaced sublimation (CSS), while the performance of the solar cell decreases when the CBD CdS is annealed with argon-hydrogen. Electronic properties of the CdS films are investigated using X-ray photo-electron spectroscopy (XPS), which indicates that the Fermi level is shifting closer to the conduction band after annealing in the oxygen and consequently a higher open circuit voltage of the solar cell can be obtained. (C) 2010 Elsevier Ltd. All rights reserved. |
| URI | http://hdl.handle.net/20.500.11897/148691 |
| ISSN | 0025-5408 |
| DOI | 10.1016/j.materresbull.2010.11.014 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 物理学院 核物理与核技术国家重点实验室 |
