| Title | Bonding InGaAsP/ITO/Si Hybrid Laser With ITO as Cathode and Light-Coupling Material |
| Authors | Hong, Tao Li, Yan-Ping Chen, Wei-Xi Ran, Guang-Zhao Qin, Guo-Gang Zhu, Hong-Liang Liang, Song Wang, Yang Pan, Jiao-Qing Wang, Wei |
| Affiliation | Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. Peking Univ, Sch Phys, Beijing 100871, Peoples R China. Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
| Keywords | Bonding hybrid laser indium tin oxide (ITO)/Si Si photonics SILICON |
| Issue Date | 2012 |
| Publisher | ieee photonics technology letters |
| Citation | IEEE PHOTONICS TECHNOLOGY LETTERS.2012,24,(8),712-714. |
| Abstract | A 1.5-mu m InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light-coupling material is presented. The InGaAsP gain structure with a transparent ITO cathode is flip-chip bonded onto a patterned silicon-on-insulator wafer. The light generated in the InGaAsP multiquantum wells is coupled through the ITO cathode into the Si waveguide to form an InGaAsP/ITO/Si hybrid laser. The threshold current density of this hybrid laser is 20 kA/cm(2) at 210 K. Due to the advantages of post-bonding and simplicity of the fabrication process, such a hybrid laser may be a promising Si light source. |
| URI | http://hdl.handle.net/20.500.11897/148471 |
| ISSN | 1041-1135 |
| DOI | 10.1109/LPT.2012.2187328 |
| Indexed | SCI(E) EI |
| Appears in Collections: | 人工微结构和介观物理国家重点实验室 |
