| Title | A discussion on the application and production of metal ion beams |
| Authors | Ren, Xiaotang Zhao, Ziqiang Zhao, Weijiang |
| Affiliation | Peking Univ, Inst Heavy Ion Phys, Beijing 100871, Peoples R China. Peking Univ, Key Lab Heavy Ion Phys, Minist Educ, Beijing 100871, Peoples R China. |
| Keywords | IMPLANTATION SEMICONDUCTORS SILICON SIO2 |
| Issue Date | 2008 |
| Citation | REVIEW OF SCIENTIFIC INSTRUMENTS.2008/2/1,79. |
| Abstract | Metal ion beams, which are used in surface modification of metals and alloys as ion beam micrometallurgy, are promising candidates for advanced applications in semiconductors and insulators. Doping with transition metal and rare-earth metal ions in semiconductors and insulators to form metallic nanoclusters attracted much more attention recently, since their applications in diluted magnetic semiconductors, electroluminescent devices, giant magnetic resistance, etc. In this paper, some experiments for metal ion beams will be presented, and various methods and technologies for the production of metal ion beams will be discussed. (C) 2008 American Institute of Physics. |
| URI | http://hdl.handle.net/20.500.11897/147652 |
| ISSN | 0034-6748 |
| DOI | 10.1063/1.2804910 |
| Indexed | SCI(E) EI CPCI-S(ISTP) PubMed |
| Appears in Collections: | 物理学院 |
